Hege klasse IGBT Snubber-kondensatorûntwerp foar applikaasjes mei hege krêft

Hegere klasse IGBT Snubber-kondensatorûntwerp foar applikaasjes mei hege krêft Featured Image

Koarte beskriuwing:

IGBT snubber SMJ-P

1. Plastic gefal, Sealed mei hars;

2. Tin-plated koper ynsette leads, maklike ynstallaasje foar IGBT;

3. Ferset tsjin hege spanning, lege tgδ, lege temperatuerferheging;

4. lege ESL en ESR;

5. Hege puls Strom;

6. UL sertifisearre.

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Produkt Detail

Produkt Tags

Technyske data

Operating temperatuer berik	Max. Operating temperatuer., Top, max: +105 ℃ Boppe kategory temperatuer: +85 ℃ Legere kategory temperatuer: -40 ℃
capacitance berik	0.1μF～5.6μF
Rated voltage	700V.DC～3000V.DC
Cap.tol	±5%(J);±10%(K)
Standert spanning	1.5Un DC/10S
Dissipaasje faktor	tgδ≤0.0005 C≤1μF f=10KHz tgδ≤0.001 C≥1μF f=10KHz
Isolaasje ferset	C≤0.33μF RS≥15000 MΩ (by 20℃ 100V.DC 60S) C＞0.33μF RS*C≥5000S (by 20℃ 100V.DC 60S)
Standert staking stroom	sjoch datasheet
Flame retardaasje	UL94V-0
Libbensferwachting	100000h(Un; Θhotspot≤85°C)
Referinsje standert	IEC61071;GB/T17702;

Spesifikaasje tabel

foltaazje	Un 700V.DC,Urms400Vac;Us1050V
	dimensje (mm)
Cn(μF)	L(±1)	T(±1)	H(±1)	ESR @100KHz (mΩ)	ESL(nH)	dv/dt (V/μS)	Ipk(A)	Irms @40℃ @100KHz (A)
0.47	42.5	24.5	27.5	12	25	500	235	8
0.68	42.5	24.5	27.5	10	25	480	326,4	10
1	42.5	24.5	27.5	8	24	450	450	12
1.5	42.5	33.5	35,5	7	25	430	645	5
2	42.5	33	35,5	6	24	420	840	15
2.5	42.5	33	45	6	23	400	1000	18
3	42.5	33	45	5.5	22	380	1140	20
3	57,5	30	45	5	26	350	1050	22
3.5	42.5	33	45	5	23	350	1225	25
3.5	57,5	30	45	6	25	300	1050	22
4.7	57,5	35	50	5	28	280	1316	25
5.6	57,5	38	54	4	30	250	1400	25
6	57,5	38	54	3.5	33	230	1380	28
6.8	57,5	42.5	56	3.2	32	220	1496	32
8	57,5	42.5	56	2.8	30	200	1600	33
foltaazje	Un 1000V.DC,Urms500Vac;Us1500V
	dimensje (mm)
Cn(μF)	L(±1)	T(±1)	H(±1)	ESR(mΩ)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Irms
0.47	42.5	24.5	27.5	11	25	1000	470	10
0.68	42.5	24.5	27.5	8	25	800	544	12
1	42.5	33.5	35,5	6	24	800	800	15
1.5	42.5	33	45	6	24	700	1050	15
2	42.5	33	45	5	22	700	1400	20
2.5	57,5	30	45	5	30	600	1500	22
3	57,5	35	50	4	30	600	1800	25
3.3	57,5	35	50	3.5	28	550	1815	25
3.5	57,5	38	54	3.5	28	500	1750	25
4	57,5	38	54	3.2	26	500	2000	28
4.7	57,5	42.5	56	3	25	420	1974	30
5.6	57,5	42.5	56	2.8	24	400	2240	32
foltaazje	Un 1200V.DC,Urms550Vac;Us1800V
Cn(μF)	L(±1)	T(±1)	H(±1)	ESR(mΩ)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Irms
0.47	42.5	24.5	27.5	11	24	1200	564	10
0.68	42.5	33.5	35,5	7	23	1100	748	12
1	42.5	33.5	35,5	6	22	800	800	14
1.5	42.5	33	45	5	20	800	1200	15
2	57,5	30	45	4	30	750	1500	20
2.5	57,5	35	50	4	28	700	1750	25
3	57,5	35	50	4	27	600	1800	25
3.3	57,5	38	54	4	27	550	1815	28
3.5	57,5	38	54	3.5	25	500	1750	28
4	57,5	42.5	56	3.5	25	450	1800	30
4.7	57,5	42.5	56	3.2	23	420	1974	32
foltaazje	Un 1700V.DC,Urms575Vac;Us2250V
Cn(μF)	L(±1)	T(±1)	H(±1)	ESR(mΩ)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Irms
0.33	42.5	24.5	27.5	12	25	1300	429	9
0.47	42.5	24.5	27.5	10	24	1300	611	10
0.68	42.5	33.5	35,5	8	23	1300	884	12
1	42.5	33	45	7	22	1200	1200	15
1.5	42.5	33	45	6	22	1200	1800	18
1.5	57,5	30	45	5	31	1200	1800	20
2	57,5	30	45	5	30	1100	2200	22
2.5	57,5	35	50	4	28	1100	2750	25
3	57,5	38	54	4	27	700	2100	25
3.3	57,5	38	54	3.8	26	600	1980	28
3.5	57,5	42.5	56	3.5	25	500	1750	30
4	57,5	42.5	56	3.2	25	450	1800	32
foltaazje	Un 2000V.DC,Urms700Vac;Us3000V
Cn(μF)	L(±1)	T(±1)	H(±1)	ESR(mΩ)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Irms
0.22	42.5	24.5	27.5	15	25	1500	330	10
0.33	42.5	33.5	35,5	12	24	1500	495	12
0.47	42.5	33.5	35,5	11	23	1400	658	15
0.68	42.5	33	45	8	22	1200	816	18
0.68	57,5	30	45	7	30	1100	748	20
0.82	42.5	33	45	7	28	1200	984	22
1	57,5	30	45	6	28	1100	1100	25
1.5	57,5	35	50	5	25	1000	1500	28
2	57,5	38	54	5	24	800	1600	28
2.2	57,5	42.5	56	4	23	700	1540	32
foltaazje	Un 3000V.DC,Urms750Vac;Us4500V
Cn(μF)	L(±1)	T(±1)	H(±1)	ESR(mΩ)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Irms
0.15	42.5	33	45	18	28	2500	375	25
0.22	42.5	33	45	15	27	2200	484	28
0.22	57,5	35	50	15	25	2000	330	20
0.33	57,5	35	50	12	24	1800	495	20
0.47	57,5	38	54	11	23	1600	752	22
0.68	57,5	42.5	56	8	22	1500	1020	28